Description

Positive contact
Negative contact
For this structure, you’ll optimize the thickness and doping for the absorber layer for maximum power conversion efficiency, under illumination from the Sun. You can choose any of the following material as the absorber (first come first offered):
1. Lead halide perovskite (any composition reported in the literature)
2. GaAs
3. Polycrystalline Silicon
4. Monocrystalline Silicon
5. CIGS
6. CdTe
You’ll need to use MATLAB for this project. Instructions on how to access and install MATLAB is provided here.
We will assume the generated electron-hole pairs are readily separated by the contacts and collected, and we’ll use a constant value of series resistance Rs and shunt resistance Rsh as an input to the simulation.

Download the code from the GitHub link https://github.com/zomair/ELENG134-UC-
Berkeley. You’ll only need to use the device_params.m file to provide inputs to the simulation and run PV_JV.m to obtain the output Voc, Jsc, FF, Vmpp, and Impp.
Task 1: Reproduce the Shockley-Queisser limit.
Task 2: Find the material parameters
Task 3: SQ limit for AM 1.5
Task 5: Doping optimization

Grading policy:
2. Collaboration is encouraged, however, the report has to be your own. Mention the names of anyone you’ve talked/ collaborated, and on what topic.
3. Provide proper bibliography to any external sources you’ve used.
4. Show all non-trivial steps in your coding/ calculation.
5. The code might/will be updated during the duration of the project. Any updates to the code will be announced on bcourses. It is YOUR responsibility to download the latest version of the code from the GitHub repository mentioned above.